unisonic technologies co., ltd utt30np30 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r502-a40.b dual power mosfet (n-channel/p-channel) ? description the utc utt30np30 is a dual power mosfet. it uses utc?s advanced technology to provide customers with a minimum on-state resistance, low capacitance and low gate charge, etc. the utc utt30np30 is suitable for cpu power delivery and dc ? dc converters, etc. ? features * n-channel: 30a, 20v r ds(on) <15m ? @v gs =10v, i d =30a r ds(on) <18m ? @v gs =4.5v, i d =30a p-channel: -30a, -25v r ds(on) <25m ? @v gs = -10v, i d = -30a r ds(on) <24m ? @v gs = -4.5v, i d = -30a * low capacitance ? symbol to-252-4 1 ? ordering information note: pin assignment: g: gate d: drain s: source ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 utt30np30l-tn4-r UTT30NP30G-TN4-R to-252-4 s1 g1 d s2 g2 tape reel
utt30np30 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-a40.b ? marking
utt30np30 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-a40.b ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit n-channel p-channel drain-source voltage v dss 20 -25 v gate-source voltage v gss 8 20 v drain current continuous t a =25c i d 30 -30 a pulsed (note) i dm 120 -120 a power dissipation p d 3.1 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 40 ? c/w ? electrical characteristics (t j =25c unless otherwise noted) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v drain-source leakage current i dss v ds =20v, v gs =0v, t j =25c 1.0 a gate-source leakage current forward i gss v gs =+8v, v gs =0v +100 na reverse v gs =-8v, v gs =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 0.5 1.2 v static drain-source on-state resistance (note 2) r ds(on) v gs =10v, i d =30a 15 m ? v gs =4.5v, i d =30a 18 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =20v, f=1.0mhz 1500 pf output capacitance c oss 260 pf reverse transfer capacitance c rss 260 pf switching parameters total gate charge (note 2) q g v gs =10v, v ds =16v, i d =30a 160 170 nc gate to source charge q gs 5.5 nc gate to drain charge q gd 10.5 nc turn-on delay time (note 2) t d ( on ) v ds =10v, i d =1a v gs =10v, r g =3.3 ? 31 38 ns rise time t r 57 62 ns turn-off delay time t d ( off ) 458 510 ns fall-time t f 234 270 ns source- drain diode ratings and characteristics drain-source diode forward voltage(note 2) v sd i sd =30a 0.9 1.25 v
utt30np30 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-a40.b ? electrical characteristics(cont.) p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -25 v drain-source leakage current i dss v ds =-24v, v gs =0v, t j =25c -1.0 a gate-source leakage current forward i gss v gs =+25v, v gs =0v +100 na reverse v gs =-25v, v gs =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -1.5 -3 v static drain-source on-state resistance (note 2) r ds(on) v gs =-10v, i d =-30a 25 m ? v gs =-4.5v, i d =-30a 34 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =-15v, f=1.0mhz 1500 pf output capacitance c oss 270 pf reverse transfer capacitance c rss 230 pf switching parameters total gate charge (note 2) q g v gs =-10v, v ds =-20v, i d =-30a 140 160 nc gate to source charge q gs 5.4 nc gate to drain charge q gd 8.7 nc turn-on delay time (note 2) t d ( on ) v ds = -12.5v, i d = -1a v gs = -10v, r g =3.3 ? 34 42 ns rise time t r 42 48 ns turn-off delay time t d ( off ) 308 330 ns fall-time t f 173 220 ns source- drain diode ratings and characteristics drain-source diode forward voltage(note 2) v sd i s = -30a -1.2 v notes: 1. pulse test: pulse width limit ed by max. junction temperature. 2. n-ch, p- Q ch are same, mounted on 2oz fr4 board t 10s.
utt30np30 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-a40.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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